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http://dbpedia.org/ontology/abstract The RCA clean is a standard set of wafer cThe RCA clean is a standard set of wafer cleaning steps which need to be performed before high-temperature processing steps (oxidation, diffusion, CVD) of silicon wafers in semiconductor manufacturing. Werner Kern developed the basic procedure in 1965 while working for RCA, the Radio Corporation of America. It involves the following chemical processes performed in sequence: 1. * Removal of the organic contaminants (organic clean + particle clean) 2. * Removal of thin oxide layer (oxide strip, optional) 3. * Removal of ionic contamination (ionic clean)moval of ionic contamination (ionic clean) , 半導体製造におけるRCA洗浄とは、シリコンウェハーの標準的な洗浄方法で、高温プロセス(酸化、拡散、化学気相成長)の前に行われる。 RCA社のWerner Kernが1965年に基本的なプロセスを開発した。RCA洗浄は次の化学プロセスをこの順で行う。 1. * 有機物汚染とパーティクル汚染の除去 2. * 酸化物層の除去 3. * イオン汚染の除去 , RCA-Reinigung (engl. RCA clean) – sehr selten auch modifizierte Huang-Reinigung – ist ein Verfahren zur Scheibenreinigung (Wafer-Reinigung) in der Mikroelektronik. , De RCA-reiniging (RCA clean) is een reeks standaardreinigingen om halfgeleiderchips schoon te maken. Het doel is om organische stoffen (1), oxidelagen (2) en ionische (3) te verwijderen.
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rdfs:comment The RCA clean is a standard set of wafer cThe RCA clean is a standard set of wafer cleaning steps which need to be performed before high-temperature processing steps (oxidation, diffusion, CVD) of silicon wafers in semiconductor manufacturing. Werner Kern developed the basic procedure in 1965 while working for RCA, the Radio Corporation of America. It involves the following chemical processes performed in sequence: 1. * Removal of the organic contaminants (organic clean + particle clean) 2. * Removal of thin oxide layer (oxide strip, optional) 3. * Removal of ionic contamination (ionic clean)moval of ionic contamination (ionic clean) , RCA-Reinigung (engl. RCA clean) – sehr selten auch modifizierte Huang-Reinigung – ist ein Verfahren zur Scheibenreinigung (Wafer-Reinigung) in der Mikroelektronik. , 半導体製造におけるRCA洗浄とは、シリコンウェハーの標準的な洗浄方法で、高温プロセス(酸化、拡散、化学気相成長)の前に行われる。 RCA社のWerner Kernが1965年に基本的なプロセスを開発した。RCA洗浄は次の化学プロセスをこの順で行う。 1. * 有機物汚染とパーティクル汚染の除去 2. * 酸化物層の除去 3. * イオン汚染の除去 , De RCA-reiniging (RCA clean) is een reeks standaardreinigingen om halfgeleiderchips schoon te maken. Het doel is om organische stoffen (1), oxidelagen (2) en ionische (3) te verwijderen.
rdfs:label RCA-Reinigung , RCA clean , RCA-reiniging , RCA洗浄
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