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통합 게이트 정류 사이리스터(Integrated Gate Commutated … 통합 게이트 정류 사이리스터(Integrated Gate Commutated Thyristor, IGCT)는 대용량의 전류를 제어할 수 있는 신형 반도체 소자이다. GTO와 비슷한 사이리스터의 일종으로, 제어단자(gate) 신호로 켜고 끌 수 있으며 GTO에 비해 전도 손실이 적은 것이 특징이다. 또한 IGCT는 GTO에 비해 조금 더 고속의 스위칭이 가능하다. 최고 400KHz까지의 스위칭이 가능하지만, 변환 손실이 크기 때문에 보통은 500Hz 정도로 스위칭한다. 개발사는 스위스의 ABB이다. 때문에 보통은 500Hz 정도로 스위칭한다. 개발사는 스위스의 ABB이다.
, Un Tiristor Controlado por Puerta Integrad … Un Tiristor Controlado por Puerta Integrada o simplemente Tiristor IGCT (del inglés Integrated Gate-Commutated Thyristor) es un dispositivo semiconductor empleado en electrónica de potencia para conmutar corriente eléctrica en equipos industriales. Es la evolución del Tiristor GTO (del inglés Gate Turn-Off). Al igual que el GTO, el IGCT es un interruptor controlable, permitiendo además de activarlo, también desactivarlo desde el terminal de control Puerta o G (del inglés Gate). La electrónica de control de la puerta está integrada en el propio tiristor.
* Datos: Q1066563 en el propio tiristor.
* Datos: Q1066563
, Der IGC-Thyristor (englisch integrated gat … Der IGC-Thyristor (englisch integrated gate-commutated thyristor, IGCT) ist eine Weiterentwicklung des GTO-Thyristors. IGCTs zeichnen sich diesen gegenüber aus durch:
* einen verringerten Beschaltungsaufwand
* Erhöhung der maximalen Pulsfrequenzen zur Ansteuerung
* bessere Schaltzeiten bei Reihenschaltung Darüber hinaus vertragen IGCT höhere Spannungsanstiegsraten (dV/dt), was in den meisten Fällen den Einsatz von Snubbern unnötig macht. Zum Abschalten benötigen sie einen Gatestrom, der höher ist als der Anodenstrom. Dadurch werden kurze Abschaltzeiten erreicht, aber auch große Kondensatorbatterien in der Nähe des IGCTs benötigt. IGCTs können symmetrisch (in Rückwärtsrichtung sperrend) oder asymmetrisch (Durchbruchsspannung in Rückwärtsrichtung einige 10 V) ausgeführt werden. Letztere zeichnen sich durch geringere Leitungsverluste aus und werden als A-IGCTs bezeichnet. Üblicherweise wird eine antiparallele Diode funktionell ähnlich der Body-Diode eines MOSFET mitintegriert und dieses Bauteil dann als RC-IGCT (für reverse conducting) bezeichnet. Das Einsatzgebiet von IGCTs sind Stromrichter hoher Leistung. Ein einzelnes Modul schaltet dabei typischerweise einige Kiloampere bei einer typischen Sperrspannung von 4500 V. einer typischen Sperrspannung von 4500 V.
, The integrated gate-commutated thyristor ( … The integrated gate-commutated thyristor (IGCT) is a power semiconductor electronic device, used for switching electric current in industrial equipment. It is related to the gate turn-off (GTO) thyristor. It was jointly developed by Mitsubishi and ABB. Like the GTO thyristor, the IGCT is a fully controllable power switch, meaning that it can be turned both on and off by its control terminal (the gate). Gate drive electronics are integrated with the thyristor device. are integrated with the thyristor device.
, 基體閘換向閘流體（integrated gate-commutated thyristor）簡稱IGCT，是的电子学元件，在工業設備中切換电流用。其原理和可關斷晶閘管（GTO）有關。 IGCT是由三菱集团及ABB聯合開發。IGCT類似可關斷晶閘管（GTO），是完全可控的功率開關，其導通及關斷都是由控制信號（閘極）控制。閘級驅動的電路一般會整合閘流體元件。
, 集積化ゲート転流型サイリスタ(しゅうせきかゲートてんりゅうがたサイリスタ、英語: Integrated Gate Commutated Turn-off thyristor)とは、高周波特性を改善した電力用半導体素子である。
, O tiristor comutável por porta integrada ( … O tiristor comutável por porta integrada (IGCT) é um semicondutor de potência, utilizado para comutação de corrente elétrica em equipamentos industriais. Ele está relacionado com o tiristor GTO. Foi desenvolvido em conjunto pela Mitsubishi e a ABB. Como o tiristor GTO, o IGCT é uma chave de comutação forçada, o que significa que ele pode ser ativado e desativado pelo seu terminal de controle ( gate). Os dispositivos necessários para o "drive" da porta (gate) ja se encontram presentes no componente.) ja se encontram presentes no componente.
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Der IGC-Thyristor (englisch integrated gat … Der IGC-Thyristor (englisch integrated gate-commutated thyristor, IGCT) ist eine Weiterentwicklung des GTO-Thyristors. IGCTs zeichnen sich diesen gegenüber aus durch:
* einen verringerten Beschaltungsaufwand
* Erhöhung der maximalen Pulsfrequenzen zur Ansteuerung
* bessere Schaltzeiten bei Reihenschaltung Darüber hinaus vertragen IGCT höhere Spannungsanstiegsraten (dV/dt), was in den meisten Fällen den Einsatz von Snubbern unnötig macht.en den Einsatz von Snubbern unnötig macht.
, The integrated gate-commutated thyristor ( … The integrated gate-commutated thyristor (IGCT) is a power semiconductor electronic device, used for switching electric current in industrial equipment. It is related to the gate turn-off (GTO) thyristor. It was jointly developed by Mitsubishi and ABB. Like the GTO thyristor, the IGCT is a fully controllable power switch, meaning that it can be turned both on and off by its control terminal (the gate). Gate drive electronics are integrated with the thyristor device. are integrated with the thyristor device.
, 集積化ゲート転流型サイリスタ(しゅうせきかゲートてんりゅうがたサイリスタ、英語: Integrated Gate Commutated Turn-off thyristor)とは、高周波特性を改善した電力用半導体素子である。
, Un Tiristor Controlado por Puerta Integrad … Un Tiristor Controlado por Puerta Integrada o simplemente Tiristor IGCT (del inglés Integrated Gate-Commutated Thyristor) es un dispositivo semiconductor empleado en electrónica de potencia para conmutar corriente eléctrica en equipos industriales. Es la evolución del Tiristor GTO (del inglés Gate Turn-Off). Al igual que el GTO, el IGCT es un interruptor controlable, permitiendo además de activarlo, también desactivarlo desde el terminal de control Puerta o G (del inglés Gate). La electrónica de control de la puerta está integrada en el propio tiristor.
* Datos: Q1066563 en el propio tiristor.
* Datos: Q1066563
, O tiristor comutável por porta integrada ( … O tiristor comutável por porta integrada (IGCT) é um semicondutor de potência, utilizado para comutação de corrente elétrica em equipamentos industriais. Ele está relacionado com o tiristor GTO. Foi desenvolvido em conjunto pela Mitsubishi e a ABB. Como o tiristor GTO, o IGCT é uma chave de comutação forçada, o que significa que ele pode ser ativado e desativado pelo seu terminal de controle ( gate). Os dispositivos necessários para o "drive" da porta (gate) ja se encontram presentes no componente.) ja se encontram presentes no componente.
, 基體閘換向閘流體（integrated gate-commutated thyristor）簡稱IGCT，是的电子学元件，在工業設備中切換电流用。其原理和可關斷晶閘管（GTO）有關。 IGCT是由三菱集团及ABB聯合開發。IGCT類似可關斷晶閘管（GTO），是完全可控的功率開關，其導通及關斷都是由控制信號（閘極）控制。閘級驅動的電路一般會整合閘流體元件。
, 통합 게이트 정류 사이리스터(Integrated Gate Commutated … 통합 게이트 정류 사이리스터(Integrated Gate Commutated Thyristor, IGCT)는 대용량의 전류를 제어할 수 있는 신형 반도체 소자이다. GTO와 비슷한 사이리스터의 일종으로, 제어단자(gate) 신호로 켜고 끌 수 있으며 GTO에 비해 전도 손실이 적은 것이 특징이다. 또한 IGCT는 GTO에 비해 조금 더 고속의 스위칭이 가능하다. 최고 400KHz까지의 스위칭이 가능하지만, 변환 손실이 크기 때문에 보통은 500Hz 정도로 스위칭한다. 개발사는 스위스의 ABB이다. 때문에 보통은 500Hz 정도로 스위칭한다. 개발사는 스위스의 ABB이다.
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| rdfs:label |
集積化ゲート転流型サイリスタ
, IGC-Thyristor
, Integrated gate-commutated thyristor
, 基體閘換向閘流體
, 통합 게이트 정류 사이리스터
, Tiristor IGCT
, IGCT
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