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Un transistor de avalancha es un transisto … Un transistor de avalancha es un transistor de unión bipolar diseñado para la operación en su rango característico de colector de corriente/voltaje en colector-emisor , más allá de su voltaje de ruptura llamado región de Esta región caracterizada por el quiebre de avalancha, el cual es un fenómeno similar a la descarga de Townsend para los gases y . La operación en la región de es llamada operación en modo avalancha , esto da a los transistores de avalancha la capacidad de cambiar corrientes muy altas en menos de un nanosegundo de y de . Los transistores no diseñados específicamente para tal propósito, pueden tener propiedades razonables de avalancha; por ejemplo el 82% de las muestras de cambio de alta velocidad de 15V del 2N2369 , fabricado en un periodo de 12 años , son capaces de generar pulsos de quiebre de avalancha con un de 350 ps o menos, usando una fuente voltaje de 90 V como el diseñador indica.oltaje de 90 V como el diseñador indica.
, Ein Avalanchetransistor, auch Lawinentrans … Ein Avalanchetransistor, auch Lawinentransistor genannt, ist eine besondere Art eines Bipolartransistors, die speziell für einen Betrieb oberhalb der Durchbruchsspannung, in der Region des Lawinendurchbruches (englisch Avalanche breakdown), entwickelt wurde. Der Transistor hat in dieser Betriebsart als wesentliche Eigenschaft einen negativen differentiellen Widerstand. Die erste Veröffentlichung zu dem Avalanchetransistor datiert auf das Jahr 1955 und erfolgte durch J. J. Ebers und S. L. Miller bei den Bell Laboratories. Durch diesen besonderen Arbeitspunkt erreicht der Transistor relativ große Ströme, bei einigen Typen mehrere 10 A, und zu herkömmlichen Bipolartransistoren vergleichsweise kurze Schaltzeiten unter 1 ns. Eine besondere Unterart des Avalanchetransistors ist die Controlled Avalanche Transit Time Triode (CATT), die in Verstärkern im Mikrowellenbereich eingesetzt wird. Entgegen einem normalen Bipolartransistor ist es bei gleichzeitiger zeitlicher Begrenzung des Stromflusses möglich, Avalanchetransistoren herzustellen, die auch im Bereich des 2. Durchbruchs betrieben werden können, ohne das diese dabei permanent beschädigt oder zerstört werden. Diese Betriebsart kann dazu eingesetzt werden um die schaltbare Spannung und die schaltbaren Ströme weiter zu erhöhen, ohne dabei die Schaltzeit negativ zu beeinflussen. R. J. Baker veröffentlichte 1991 dazu eine Abhandlung mit einigen entsprechenden Beispielen.ung mit einigen entsprechenden Beispielen.
, An avalanche transistor is a bipolar junct … An avalanche transistor is a bipolar junction transistor designed for operation in the region of its collector-current/collector-to-emitter voltage characteristics beyond the collector-to-emitter breakdown voltage, called avalanche breakdown region. This region is characterized by avalanche breakdown, which is a phenomenon similar to Townsend discharge for gases, and negative differential resistance. Operation in the avalanche breakdown region is called avalanche-mode operation: it gives avalanche transistors the ability to switch very high currents with less than a nanosecond rise and fall times (transition times). Transistors not specifically designed for the purpose can have reasonably consistent avalanche properties; for example 82% of samples of the 15V high-speed switch 2N2369, manufactured over a 12-year period, were capable of generating avalanche breakdown pulses with rise time of 350 ps or less, using a 90V power supply as Jim Williams writes.a 90V power supply as Jim Williams writes.
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Un transistor de avalancha es un transisto … Un transistor de avalancha es un transistor de unión bipolar diseñado para la operación en su rango característico de colector de corriente/voltaje en colector-emisor , más allá de su voltaje de ruptura llamado región de Esta región caracterizada por el quiebre de avalancha, el cual es un fenómeno similar a la descarga de Townsend para los gases y . La operación en la región de es llamada operación en modo avalancha , esto da a los transistores de avalancha la capacidad de cambiar corrientes muy altas en menos de un nanosegundo de y de . Los transistores no diseñados específicamente para tal propósito, pueden tener propiedades razonables de avalancha; por ejemplo el 82% de las muestras de cambio de alta velocidad de 15V del 2N2369 , fabricado en un periodo de 12 años , son capaces de en un periodo de 12 años , son capaces de
, Ein Avalanchetransistor, auch Lawinentrans … Ein Avalanchetransistor, auch Lawinentransistor genannt, ist eine besondere Art eines Bipolartransistors, die speziell für einen Betrieb oberhalb der Durchbruchsspannung, in der Region des Lawinendurchbruches (englisch Avalanche breakdown), entwickelt wurde. Der Transistor hat in dieser Betriebsart als wesentliche Eigenschaft einen negativen differentiellen Widerstand. Die erste Veröffentlichung zu dem Avalanchetransistor datiert auf das Jahr 1955 und erfolgte durch J. J. Ebers und S. L. Miller bei den Bell Laboratories.nd S. L. Miller bei den Bell Laboratories.
, An avalanche transistor is a bipolar junct … An avalanche transistor is a bipolar junction transistor designed for operation in the region of its collector-current/collector-to-emitter voltage characteristics beyond the collector-to-emitter breakdown voltage, called avalanche breakdown region. This region is characterized by avalanche breakdown, which is a phenomenon similar to Townsend discharge for gases, and negative differential resistance. Operation in the avalanche breakdown region is called avalanche-mode operation: it gives avalanche transistors the ability to switch very high currents with less than a nanosecond rise and fall times (transition times). Transistors not specifically designed for the purpose can have reasonably consistent avalanche properties; for example 82% of samples of the 15V high-speed switch 2N2369, manufof the 15V high-speed switch 2N2369, manuf
|
| rdfs:label |
Transistor de avalancha
, Avalanchetransistor
, Avalanche transistor
|
