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Atomic layer epitaxy (ALE), more generally … Atomic layer epitaxy (ALE), more generally known as atomic layer deposition (ALD), is a specialized form of thin film growth (epitaxy) that typically deposit alternating monolayers of two elements onto a substrate. The crystal lattice structure achieved is thin, uniform, and aligned with the structure of the substrate. The reactants are brought to the substrate as alternating pulses with "dead" times in between. ALE makes use of the fact that the incoming material is bound strongly until all sites available for chemisorption are occupied. The dead times are used to flush the excess material.It is mostly used in semiconductor fabrication to grow thin films of thickness in the nanometer scale.films of thickness in the nanometer scale.
, Осаждение атомных слоёв, или атомно-слоево … Осаждение атомных слоёв, или атомно-слоевое осаждение; молекулярное наслаивание (англ. atomic layer deposition или англ. atomic layer epitaxy сокр., ALD; ALE) — технология нанесения тонких плёнок, основанная на последовательном использовании самоограниченных химических реакций для точного контроля толщины нанесённого слоя.точного контроля толщины нанесённого слоя.
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https://dx.doi.org/10.1088/0957-4484/10/1/005 +
, https://web.archive.org/web/20070616230113/http:/web.phys.tue.nl/nl/de_faculteit/capaciteitsgroepen/plasmafysica_en_stralingstechnologie/plasma_amp_materials_processing/scientific_projects/ald/plasma_assisted_atomic_layer_deposition/ +
, https://web.archive.org/web/20050729090958/http:/www.unifi.it/unifi/surfchem/solid/alenet/pub/ +
, https://web.archive.org/web/20051101073358/http:/unit.aist.go.jp/digital-mfg/staff/hirose/Smoothing.pdf +
, http://www.abc.chemistry.bsu.by/vi/Te-Cu-Pb%20on%20Au.htm +
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| rdfs:comment |
Atomic layer epitaxy (ALE), more generally … Atomic layer epitaxy (ALE), more generally known as atomic layer deposition (ALD), is a specialized form of thin film growth (epitaxy) that typically deposit alternating monolayers of two elements onto a substrate. The crystal lattice structure achieved is thin, uniform, and aligned with the structure of the substrate. The reactants are brought to the substrate as alternating pulses with "dead" times in between. ALE makes use of the fact that the incoming material is bound strongly until all sites available for chemisorption are occupied. The dead times are used to flush the excess material.It is mostly used in semiconductor fabrication to grow thin films of thickness in the nanometer scale.films of thickness in the nanometer scale.
, Осаждение атомных слоёв, или атомно-слоево … Осаждение атомных слоёв, или атомно-слоевое осаждение; молекулярное наслаивание (англ. atomic layer deposition или англ. atomic layer epitaxy сокр., ALD; ALE) — технология нанесения тонких плёнок, основанная на последовательном использовании самоограниченных химических реакций для точного контроля толщины нанесённого слоя.точного контроля толщины нанесённого слоя.
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| rdfs:label |
Осаждение атомных слоёв
, Atomic layer epitaxy
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